A: PSIM can simulate the switching losses of semiconductors with several methods. Using the thermal module a user can simulate thermally dependant switching losses of MOSFET, IGBTS, diodes, and GaN devices. When using the thermal module the thermally dependant conduction losses are also calculated. The junction temperature of the device is determined and this is used by the module to determine what the loss characteristics need to be.
Additionally, with the Level-2 devices released in PSIM version 10 it is possible to simulate switching losses of a MOSFET and the reverse recovery of a diode. Integrating the voltage across a device with the current flowing through it will give you the switching losses.